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| MMBTSC2411 NPN Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups P, Q and R according to its DC current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta =25 OC Parameter DC Current Gain at VCE = 3 V, IC = 100 mA P Q R Symbol hFE hFE hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) fT Cob Symbol VCBO VCEO VEBO IC Ptot Tj TS SOT-23 Plastic Package Value 40 32 5 500 200 150 -55 to +150 Unit V V V mA mW O C C O Min. 82 120 180 40 32 5 - Typ. 250 6 Max. 180 270 390 1 1 0.4 - Unit V V V A A V MHz pF Collector Base Breakdown Voltage at IC= 100 A Collector Emitter Breakdown Voltage at IC= 1 mA Emitter Base Breakdown Voltage at IE= 100 A Collector Cutoff Current at VCB= 20 V Emitter Cutoff Current at VEB = 4 V Collector Saturation Voltage at IC = 500 mA, IB = 50 mA Transition frequency at VCE = 5 V, -IE = 20 mA, f = 100 MHz Output Capacitance at VCB = 10 V, IE = 0 A, f = 1 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 21/12/2005 MMBTSC2411 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 21/12/2005 |
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